Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures

Abstract Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of...

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Autores principales:	Chithra H. Sharma, Madhu Thalakulam
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d64dbd51a47141de8efa342552e6a9fa
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spelling	oai:doaj.org-article:d64dbd51a47141de8efa342552e6a9fa2021-12-02T12:32:43ZSplit-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures10.1038/s41598-017-00857-72045-2322https://doaj.org/article/d64dbd51a47141de8efa342552e6a9fa2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00857-7https://doaj.org/toc/2045-2322Abstract Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructures. In this letter we show the operation of a split-gate defined point contact device on a MoS2/h-BN heterostructure, the first step towards realizing electrostatically gated quantum circuits on van der Waals semiconductors. By controlling the voltage on the split-gate we are able to control and confine the electron flow in the device leading to the formation of the point contact. The formation of the point contact in our device is elucidated by the three characteristic regimes observed in the pinch-off curve; transport similar to the conventional FET, electrostatically confined transport and the tunneling dominated transport. We explore the role of the carrier concentration and the drain-source voltages on the pinch-off characteristics. We are able to tune the pinch-off characteristics by varying the back-gate voltage at temperatures ranging from 4 K to 300 K.Chithra H. SharmaMadhu ThalakulamNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chithra H. Sharma Madhu Thalakulam Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
description	Abstract Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructures. In this letter we show the operation of a split-gate defined point contact device on a MoS2/h-BN heterostructure, the first step towards realizing electrostatically gated quantum circuits on van der Waals semiconductors. By controlling the voltage on the split-gate we are able to control and confine the electron flow in the device leading to the formation of the point contact. The formation of the point contact in our device is elucidated by the three characteristic regimes observed in the pinch-off curve; transport similar to the conventional FET, electrostatically confined transport and the tunneling dominated transport. We explore the role of the carrier concentration and the drain-source voltages on the pinch-off characteristics. We are able to tune the pinch-off characteristics by varying the back-gate voltage at temperatures ranging from 4 K to 300 K.
format	article
author	Chithra H. Sharma Madhu Thalakulam
author_facet	Chithra H. Sharma Madhu Thalakulam
author_sort	Chithra H. Sharma
title	Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
title_short	Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
title_full	Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
title_fullStr	Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
title_full_unstemmed	Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
title_sort	split-gated point-contact for electrostatic confinement of transport in mos2/h-bn hybrid structures
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d64dbd51a47141de8efa342552e6a9fa
work_keys_str_mv	AT chithrahsharma splitgatedpointcontactforelectrostaticconfinementoftransportinmos2hbnhybridstructures AT madhuthalakulam splitgatedpointcontactforelectrostaticconfinementoftransportinmos2hbnhybridstructures
_version_	1718394009101008896

Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures

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