Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.

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Auteurs principaux:	Qilin Hua, Guoyun Gao, Chunsheng Jiang, Jinran Yu, Junlu Sun, Taiping Zhang, Bin Gao, Weijun Cheng, Renrong Liang, He Qian, Weiguo Hu, Qijun Sun, Zhong Lin Wang, Huaqiang Wu
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2020
Sujets:	Science Q
Accès en ligne:	https://doaj.org/article/d675cdf5d6b44f2685a81f7852463d5f
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id	oai:doaj.org-article:d675cdf5d6b44f2685a81f7852463d5f
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spelling	oai:doaj.org-article:d675cdf5d6b44f2685a81f7852463d5f2021-12-02T14:40:29ZAtomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics10.1038/s41467-020-20051-02041-1723https://doaj.org/article/d675cdf5d6b44f2685a81f7852463d5f2020-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-20051-0https://doaj.org/toc/2041-1723Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.Qilin HuaGuoyun GaoChunsheng JiangJinran YuJunlu SunTaiping ZhangBin GaoWeijun ChengRenrong LiangHe QianWeiguo HuQijun SunZhong Lin WangHuaqiang WuNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Qilin Hua Guoyun Gao Chunsheng Jiang Jinran Yu Junlu Sun Taiping Zhang Bin Gao Weijun Cheng Renrong Liang He Qian Weiguo Hu Qijun Sun Zhong Lin Wang Huaqiang Wu Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
description	Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.
format	article
author	Qilin Hua Guoyun Gao Chunsheng Jiang Jinran Yu Junlu Sun Taiping Zhang Bin Gao Weijun Cheng Renrong Liang He Qian Weiguo Hu Qijun Sun Zhong Lin Wang Huaqiang Wu
author_facet	Qilin Hua Guoyun Gao Chunsheng Jiang Jinran Yu Junlu Sun Taiping Zhang Bin Gao Weijun Cheng Renrong Liang He Qian Weiguo Hu Qijun Sun Zhong Lin Wang Huaqiang Wu
author_sort	Qilin Hua
title	Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
title_short	Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
title_full	Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
title_fullStr	Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
title_full_unstemmed	Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
title_sort	atomic threshold-switching enabled mos2 transistors towards ultralow-power electronics
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/d675cdf5d6b44f2685a81f7852463d5f
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Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

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