Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.

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Detalles Bibliográficos
Autores principales: Qilin Hua, Guoyun Gao, Chunsheng Jiang, Jinran Yu, Junlu Sun, Taiping Zhang, Bin Gao, Weijun Cheng, Renrong Liang, He Qian, Weiguo Hu, Qijun Sun, Zhong Lin Wang, Huaqiang Wu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/d675cdf5d6b44f2685a81f7852463d5f
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