Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.
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| Auteurs principaux: | , , , , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2020
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/d675cdf5d6b44f2685a81f7852463d5f |
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