Annealing treatment of focused gallium ion beam processing of SERS gold substrate

Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure. It also has a number of practical applications in evaluating food safety, medicine, and forensics. The Raman spectral signal is weak, but the development of the sur...

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Autores principales:	Zhixiang Tao, Wei Zhao, Shang Wang, Boyu Zhao, Rushuai Hua, Ji Qin, Zongwei Xu
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Technology T Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/d6aedd09fa654dbd8066927ae64d2197
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id	oai:doaj.org-article:d6aedd09fa654dbd8066927ae64d2197
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spelling	oai:doaj.org-article:d6aedd09fa654dbd8066927ae64d21972021-12-01T18:51:51ZAnnealing treatment of focused gallium ion beam processing of SERS gold substrate2589-554010.1063/10.0007286https://doaj.org/article/d6aedd09fa654dbd8066927ae64d21972021-12-01T00:00:00Zhttp://dx.doi.org/10.1063/10.0007286https://doaj.org/toc/2589-5540Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure. It also has a number of practical applications in evaluating food safety, medicine, and forensics. The Raman spectral signal is weak, but the development of the surface-enhanced Raman scattering (SERS) technique has overcome this problem and led to further developments in Raman spectroscopy. This paper describes a fundamental study of the use of focused ion beam (FIB) direct writing for preparing gold substrates for SERS. Molecular dynamics and Monte Carlo simulation methods are used to investigate the damage induced by gallium ion implantation of a gold substrate. Based on characterization by x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy, the mechanism by which ion implantation and annealing influence the damage induced by a gallium FIB is analyzed. After annealing at 350 °C, a mixture of metallic gallium, its oxide Ga2O3 conforming to the stoichiometric ratio, and its sub-stable oxide (Ga2Ox) in sub-stoichiometric ratio precipitated on the surface are detected by XPS. Annealing treatment can effectively reduce the effect of gallium ion implantation on a SERS substrate fabricated by FIB direct writing.Zhixiang TaoWei ZhaoShang WangBoyu ZhaoRushuai HuaJi QinZongwei XuAIP Publishing LLCarticleTechnologyTEngineering (General). Civil engineering (General)TA1-2040ENNanotechnology and Precision Engineering, Vol 4, Iss 4, Pp 043004-043004-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Technology T Engineering (General). Civil engineering (General) TA1-2040
spellingShingle	Technology T Engineering (General). Civil engineering (General) TA1-2040 Zhixiang Tao Wei Zhao Shang Wang Boyu Zhao Rushuai Hua Ji Qin Zongwei Xu Annealing treatment of focused gallium ion beam processing of SERS gold substrate
description	Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure. It also has a number of practical applications in evaluating food safety, medicine, and forensics. The Raman spectral signal is weak, but the development of the surface-enhanced Raman scattering (SERS) technique has overcome this problem and led to further developments in Raman spectroscopy. This paper describes a fundamental study of the use of focused ion beam (FIB) direct writing for preparing gold substrates for SERS. Molecular dynamics and Monte Carlo simulation methods are used to investigate the damage induced by gallium ion implantation of a gold substrate. Based on characterization by x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy, the mechanism by which ion implantation and annealing influence the damage induced by a gallium FIB is analyzed. After annealing at 350 °C, a mixture of metallic gallium, its oxide Ga2O3 conforming to the stoichiometric ratio, and its sub-stable oxide (Ga2Ox) in sub-stoichiometric ratio precipitated on the surface are detected by XPS. Annealing treatment can effectively reduce the effect of gallium ion implantation on a SERS substrate fabricated by FIB direct writing.
format	article
author	Zhixiang Tao Wei Zhao Shang Wang Boyu Zhao Rushuai Hua Ji Qin Zongwei Xu
author_facet	Zhixiang Tao Wei Zhao Shang Wang Boyu Zhao Rushuai Hua Ji Qin Zongwei Xu
author_sort	Zhixiang Tao
title	Annealing treatment of focused gallium ion beam processing of SERS gold substrate
title_short	Annealing treatment of focused gallium ion beam processing of SERS gold substrate
title_full	Annealing treatment of focused gallium ion beam processing of SERS gold substrate
title_fullStr	Annealing treatment of focused gallium ion beam processing of SERS gold substrate
title_full_unstemmed	Annealing treatment of focused gallium ion beam processing of SERS gold substrate
title_sort	annealing treatment of focused gallium ion beam processing of sers gold substrate
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/d6aedd09fa654dbd8066927ae64d2197
work_keys_str_mv	AT zhixiangtao annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate AT weizhao annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate AT shangwang annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate AT boyuzhao annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate AT rushuaihua annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate AT jiqin annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate AT zongweixu annealingtreatmentoffocusedgalliumionbeamprocessingofsersgoldsubstrate
_version_	1718404723466305536

Annealing treatment of focused gallium ion beam processing of SERS gold substrate

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