Quantum oscillations of resistivity in bismuth nanowires
We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial st...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2009
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d75af39c237046b5830f41431f82ee10 |
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| Sumario: | We studied the influence of uniaxial deformation on the transport properties of bismuth
wires in the wide range of temperatures. Measurements of the resistance of bismuth
nanowires with several diameters and different quality reveal oscillations on the dependence
of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%)
at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate
from quantum size effect.
Evaluation of period of oscillations allows us to identify the groups of carriers involved
in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for
two experimentally observed sets of oscillations from light and heavy electrons. |
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