Quantum oscillations of resistivity in bismuth nanowires

We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial st...

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Autores principales:	Condrea, Elena, Nicorici, Andrei
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2009
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d75af39c237046b5830f41431f82ee10
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spelling	oai:doaj.org-article:d75af39c237046b5830f41431f82ee102021-11-21T12:04:48ZQuantum oscillations of resistivity in bismuth nanowires 2537-63651810-648Xhttps://doaj.org/article/d75af39c237046b5830f41431f82ee102009-09-01T00:00:00Zhttps://mjps.nanotech.md/archive/2009/article/4168https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons. Condrea, ElenaNicorici, AndreiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 8, Iss 3-4, Pp 319-324 (2009)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Condrea, Elena Nicorici, Andrei Quantum oscillations of resistivity in bismuth nanowires
description	We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
format	article
author	Condrea, Elena Nicorici, Andrei
author_facet	Condrea, Elena Nicorici, Andrei
author_sort	Condrea, Elena
title	Quantum oscillations of resistivity in bismuth nanowires
title_short	Quantum oscillations of resistivity in bismuth nanowires
title_full	Quantum oscillations of resistivity in bismuth nanowires
title_fullStr	Quantum oscillations of resistivity in bismuth nanowires
title_full_unstemmed	Quantum oscillations of resistivity in bismuth nanowires
title_sort	quantum oscillations of resistivity in bismuth nanowires
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2009
url	https://doaj.org/article/d75af39c237046b5830f41431f82ee10
work_keys_str_mv	AT condreaelena quantumoscillationsofresistivityinbismuthnanowires AT nicoriciandrei quantumoscillationsofresistivityinbismuthnanowires
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Quantum oscillations of resistivity in bismuth nanowires

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