Nanophotonic Pockels modulators on a silicon nitride platform

Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric lead zirconate titanate films on silicon nitride, in both the O- and the C-band with a modulation bandwidth beyond 33 GHz and with data rate...

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Autores principales: Koen Alexander, John P. George, Jochem Verbist, Kristiaan Neyts, Bart Kuyken, Dries Van Thourhout, Jeroen Beeckman
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/d793d590739d490098298ac8b35f9755
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Sumario:Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric lead zirconate titanate films on silicon nitride, in both the O- and the C-band with a modulation bandwidth beyond 33 GHz and with data rates of 40 Gbps.