k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the electron Fermi surface, offering new insights into...

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Autores principales: L. L. Lev, I. O. Maiboroda, M.-A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/d7a8ee1767ae4e4281aa37c8629d1091
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spelling oai:doaj.org-article:d7a8ee1767ae4e4281aa37c8629d10912021-12-02T15:34:39Zk-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures10.1038/s41467-018-04354-x2041-1723https://doaj.org/article/d7a8ee1767ae4e4281aa37c8629d10912018-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-04354-xhttps://doaj.org/toc/2041-1723Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the electron Fermi surface, offering new insights into transport properties.L. L. LevI. O. MaiborodaM.-A. HusanuE. S. GrichukN. K. ChumakovI. S. EzubchenkoI. A. ChernykhX. WangB. ToblerT. SchmittM. L. ZanaveskinV. G. ValeyevV. N. StrocovNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
L. L. Lev
I. O. Maiboroda
M.-A. Husanu
E. S. Grichuk
N. K. Chumakov
I. S. Ezubchenko
I. A. Chernykh
X. Wang
B. Tobler
T. Schmitt
M. L. Zanaveskin
V. G. Valeyev
V. N. Strocov
k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
description Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the electron Fermi surface, offering new insights into transport properties.
format article
author L. L. Lev
I. O. Maiboroda
M.-A. Husanu
E. S. Grichuk
N. K. Chumakov
I. S. Ezubchenko
I. A. Chernykh
X. Wang
B. Tobler
T. Schmitt
M. L. Zanaveskin
V. G. Valeyev
V. N. Strocov
author_facet L. L. Lev
I. O. Maiboroda
M.-A. Husanu
E. S. Grichuk
N. K. Chumakov
I. S. Ezubchenko
I. A. Chernykh
X. Wang
B. Tobler
T. Schmitt
M. L. Zanaveskin
V. G. Valeyev
V. N. Strocov
author_sort L. L. Lev
title k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
title_short k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
title_full k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
title_fullStr k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
title_full_unstemmed k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
title_sort k-space imaging of anisotropic 2d electron gas in gan/gaaln high-electron-mobility transistor heterostructures
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/d7a8ee1767ae4e4281aa37c8629d1091
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