Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

Abstract Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rat...

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Autores principales:	Chia-Yun Chen, Ta-Cheng Wei, Cheng-Ting Lin, Jheng-Yi Li
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d7f21b0c614b449ba0ee50acf0d1507d
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spelling	oai:doaj.org-article:d7f21b0c614b449ba0ee50acf0d1507d2021-12-02T12:32:13ZEnhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates10.1038/s41598-017-03498-y2045-2322https://doaj.org/article/d7f21b0c614b449ba0ee50acf0d1507d2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03498-yhttps://doaj.org/toc/2045-2322Abstract Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon MaCE process could be found by employing the conductive back substrates on p-type Si, while additionally prevented the creation of nanopores from catalytic etching reaction. Examinations on the involving etching kinetics, morphologies, wetting behaviors and surface structures were performed that validated the role of back substrates upon MaCE process. It was found that the involved two pathways for the extraction of electrons within Si favored the localized oxidation of Si at Si/Ag interfaces, thereby increasing the etching rate of MaCE process. This back-substrate involved MaCE could potentially meet the practical needs for the high-yield formation of Si nanowire arrays.Chia-Yun ChenTa-Cheng WeiCheng-Ting LinJheng-Yi LiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chia-Yun Chen Ta-Cheng Wei Cheng-Ting Lin Jheng-Yi Li Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
description	Abstract Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon MaCE process could be found by employing the conductive back substrates on p-type Si, while additionally prevented the creation of nanopores from catalytic etching reaction. Examinations on the involving etching kinetics, morphologies, wetting behaviors and surface structures were performed that validated the role of back substrates upon MaCE process. It was found that the involved two pathways for the extraction of electrons within Si favored the localized oxidation of Si at Si/Ag interfaces, thereby increasing the etching rate of MaCE process. This back-substrate involved MaCE could potentially meet the practical needs for the high-yield formation of Si nanowire arrays.
format	article
author	Chia-Yun Chen Ta-Cheng Wei Cheng-Ting Lin Jheng-Yi Li
author_facet	Chia-Yun Chen Ta-Cheng Wei Cheng-Ting Lin Jheng-Yi Li
author_sort	Chia-Yun Chen
title	Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
title_short	Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
title_full	Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
title_fullStr	Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
title_full_unstemmed	Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
title_sort	enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d7f21b0c614b449ba0ee50acf0d1507d
work_keys_str_mv	AT chiayunchen enhancingformationrateofhighlyorientedsiliconnanowirearrayswiththeassistanceofbacksubstrates AT tachengwei enhancingformationrateofhighlyorientedsiliconnanowirearrayswiththeassistanceofbacksubstrates AT chengtinglin enhancingformationrateofhighlyorientedsiliconnanowirearrayswiththeassistanceofbacksubstrates AT jhengyili enhancingformationrateofhighlyorientedsiliconnanowirearrayswiththeassistanceofbacksubstrates
_version_	1718394185651847168

Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

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