Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates
Abstract Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rat...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/d7f21b0c614b449ba0ee50acf0d1507d |
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