Wafer scale BN on sapphire substrates for improved graphene transport

Abstract Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown gra...

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Autores principales:	Shivashankar Vangala, Gene Siegel, Timothy Prusnick, Michael Snure
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d85430b4d14b448c9a0b4d8720cdb2fa
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spelling	oai:doaj.org-article:d85430b4d14b448c9a0b4d8720cdb2fa2021-12-02T15:08:03ZWafer scale BN on sapphire substrates for improved graphene transport10.1038/s41598-018-27237-z2045-2322https://doaj.org/article/d85430b4d14b448c9a0b4d8720cdb2fa2018-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-27237-zhttps://doaj.org/toc/2045-2322Abstract Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2” BN/sapphire substrates demonstrating scalability and device performance enhancement.Shivashankar VangalaGene SiegelTimothy PrusnickMichael SnureNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shivashankar Vangala Gene Siegel Timothy Prusnick Michael Snure Wafer scale BN on sapphire substrates for improved graphene transport
description	Abstract Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2” BN/sapphire substrates demonstrating scalability and device performance enhancement.
format	article
author	Shivashankar Vangala Gene Siegel Timothy Prusnick Michael Snure
author_facet	Shivashankar Vangala Gene Siegel Timothy Prusnick Michael Snure
author_sort	Shivashankar Vangala
title	Wafer scale BN on sapphire substrates for improved graphene transport
title_short	Wafer scale BN on sapphire substrates for improved graphene transport
title_full	Wafer scale BN on sapphire substrates for improved graphene transport
title_fullStr	Wafer scale BN on sapphire substrates for improved graphene transport
title_full_unstemmed	Wafer scale BN on sapphire substrates for improved graphene transport
title_sort	wafer scale bn on sapphire substrates for improved graphene transport
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/d85430b4d14b448c9a0b4d8720cdb2fa
work_keys_str_mv	AT shivashankarvangala waferscalebnonsapphiresubstratesforimprovedgraphenetransport AT genesiegel waferscalebnonsapphiresubstratesforimprovedgraphenetransport AT timothyprusnick waferscalebnonsapphiresubstratesforimprovedgraphenetransport AT michaelsnure waferscalebnonsapphiresubstratesforimprovedgraphenetransport
_version_	1718388284752658432

Wafer scale BN on sapphire substrates for improved graphene transport

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