Wafer scale BN on sapphire substrates for improved graphene transport

Wafer scale BN on sapphire substrates for improved graphene transport

Abstract Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown gra...

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Autores principales: Shivashankar Vangala, Gene Siegel, Timothy Prusnick, Michael Snure
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/d85430b4d14b448c9a0b4d8720cdb2fa
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