Wafer scale BN on sapphire substrates for improved graphene transport
Abstract Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO2/Si substrates. Chemical vapor deposition grown gra...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2018
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/d85430b4d14b448c9a0b4d8720cdb2fa |
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