Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topol...

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Autores principales:	Yipeng An, Kun Wang, Shijing Gong, Yusheng Hou, Chunlan Ma, Mingfu Zhu, Chuanxi Zhao, Tianxing Wang, Shuhong Ma, Heyan Wang, Ruqian Wu, Wuming Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
Acceso en línea:	https://doaj.org/article/d85b3e2042334c7ba5af909e7de283d5
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spelling	oai:doaj.org-article:d85b3e2042334c7ba5af909e7de283d52021-12-02T18:17:39ZNanodevices engineering and spin transport properties of MnBi2Te4 monolayer10.1038/s41524-021-00513-92057-3960https://doaj.org/article/d85b3e2042334c7ba5af909e7de283d52021-03-01T00:00:00Zhttps://doi.org/10.1038/s41524-021-00513-9https://doaj.org/toc/2057-3960Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.Yipeng AnKun WangShijing GongYusheng HouChunlan MaMingfu ZhuChuanxi ZhaoTianxing WangShuhong MaHeyan WangRuqian WuWuming LiuNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Computer softwareQA76.75-76.765ENnpj Computational Materials, Vol 7, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Computer software QA76.75-76.765 Yipeng An Kun Wang Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing Wang Shuhong Ma Heyan Wang Ruqian Wu Wuming Liu Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
description	Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.
format	article
author	Yipeng An Kun Wang Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing Wang Shuhong Ma Heyan Wang Ruqian Wu Wuming Liu
author_facet	Yipeng An Kun Wang Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing Wang Shuhong Ma Heyan Wang Ruqian Wu Wuming Liu
author_sort	Yipeng An
title	Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
title_short	Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
title_full	Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
title_fullStr	Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
title_full_unstemmed	Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
title_sort	nanodevices engineering and spin transport properties of mnbi2te4 monolayer
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/d85b3e2042334c7ba5af909e7de283d5
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_version_	1718378302661459968

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

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