Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films

Abstract Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 films to strong electron-donor chemical vapor analyt...

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Autores principales: Adam L. Friedman, Aubrey T. Hanbicki, F. Keith Perkins, Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/d8829c9ec2f94e5486f9ff54b756411b
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spelling oai:doaj.org-article:d8829c9ec2f94e5486f9ff54b756411b2021-12-02T16:07:44ZEvidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films10.1038/s41598-017-04224-42045-2322https://doaj.org/article/d8829c9ec2f94e5486f9ff54b756411b2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04224-4https://doaj.org/toc/2045-2322Abstract Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 films to strong electron-donor chemical vapor analytes. After analyzing the resultant behavior and taking into consideration doping effects, we conclude that exposure to strong electron-donors could be a method of inducing the semiconductor-metal 2H-1T TMD phase transition. We find that the conductance response to strong electron donors in both monolayer MoS2 and MoSe2 FET devices ceases after moderate exposure, with final value of the conductance being on order of that expected for the 1T phase. Full device relaxation back to a semiconducting state is accomplished by annealing in vacuum at 400 °C. We also examine chemically exposed TMD films intermittently interrogated with Raman and photoluminescence spectroscopy. We observe the appearance of weak characteristic 1T phase Raman features for MoS2 and we observed a quenching of the photoluminescence of both TMD films that is recoverable with annealing. Considering all of our data together, the effects cannot be described by doping alone. Additionally, our results suggest a mechanism for a new type of passive chemical vapor sensor.Adam L. FriedmanAubrey T. HanbickiF. Keith PerkinsGlenn G. JerniganJames C. CulbertsonPaul M. CampbellNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Adam L. Friedman
Aubrey T. Hanbicki
F. Keith Perkins
Glenn G. Jernigan
James C. Culbertson
Paul M. Campbell
Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films
description Abstract Electron-donors can impart charge to the surface of transition metal dichalcogenide (TMD) films while interacting with the film via a weak physisorption bond, making them ideal for vapor and gas sensors. We expose monolayer MoS2 and MoSe2 films to strong electron-donor chemical vapor analytes. After analyzing the resultant behavior and taking into consideration doping effects, we conclude that exposure to strong electron-donors could be a method of inducing the semiconductor-metal 2H-1T TMD phase transition. We find that the conductance response to strong electron donors in both monolayer MoS2 and MoSe2 FET devices ceases after moderate exposure, with final value of the conductance being on order of that expected for the 1T phase. Full device relaxation back to a semiconducting state is accomplished by annealing in vacuum at 400 °C. We also examine chemically exposed TMD films intermittently interrogated with Raman and photoluminescence spectroscopy. We observe the appearance of weak characteristic 1T phase Raman features for MoS2 and we observed a quenching of the photoluminescence of both TMD films that is recoverable with annealing. Considering all of our data together, the effects cannot be described by doping alone. Additionally, our results suggest a mechanism for a new type of passive chemical vapor sensor.
format article
author Adam L. Friedman
Aubrey T. Hanbicki
F. Keith Perkins
Glenn G. Jernigan
James C. Culbertson
Paul M. Campbell
author_facet Adam L. Friedman
Aubrey T. Hanbicki
F. Keith Perkins
Glenn G. Jernigan
James C. Culbertson
Paul M. Campbell
author_sort Adam L. Friedman
title Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films
title_short Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films
title_full Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films
title_fullStr Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films
title_full_unstemmed Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films
title_sort evidence for chemical vapor induced 2h to 1t phase transition in mox2 (x = se, s) transition metal dichalcogenide films
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/d8829c9ec2f94e5486f9ff54b756411b
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