The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties

Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the...

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Autores principales:	Jozeph Park, Hyun-Jun Jeong, Hyun-Mo Lee, Ho-Hyun Nahm, Jin-Seong Park
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d
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spelling	oai:doaj.org-article:d8eedc00bdd94e3391f042da103c958d2021-12-02T15:05:44ZThe resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties10.1038/s41598-017-02336-52045-2322https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02336-5https://doaj.org/toc/2045-2322Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN +s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anions, therefore diminishing the probability of forming O-O dimers (peroxides). The latter is well known to accelerate device degradation under NBIS. Calculations indicate that a balance between device performance and NBIS stability may be achieved by optimizing the nitrogen to oxygen anion ratio. Experimental results confirm that the degradation of the TFTs with respect to NBIS becomes less severe as the nitrogen content in the film increases, while the device performance reaches an intermediate peak, with field effect mobility exceeding 50 cm2/Vs.Jozeph ParkHyun-Jun JeongHyun-Mo LeeHo-Hyun NahmJin-Seong ParkNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Jozeph Park Hyun-Jun Jeong Hyun-Mo Lee Ho-Hyun Nahm Jin-Seong Park The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
description	Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN +s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anions, therefore diminishing the probability of forming O-O dimers (peroxides). The latter is well known to accelerate device degradation under NBIS. Calculations indicate that a balance between device performance and NBIS stability may be achieved by optimizing the nitrogen to oxygen anion ratio. Experimental results confirm that the degradation of the TFTs with respect to NBIS becomes less severe as the nitrogen content in the film increases, while the device performance reaches an intermediate peak, with field effect mobility exceeding 50 cm2/Vs.
format	article
author	Jozeph Park Hyun-Jun Jeong Hyun-Mo Lee Ho-Hyun Nahm Jin-Seong Park
author_facet	Jozeph Park Hyun-Jun Jeong Hyun-Mo Lee Ho-Hyun Nahm Jin-Seong Park
author_sort	Jozeph Park
title	The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
title_short	The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
title_full	The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
title_fullStr	The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
title_full_unstemmed	The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
title_sort	resonant interaction between anions or vacancies in znon semiconductors and their effects on thin film device properties
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d
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The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties

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