The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2017
|
| Subjects: | |
| Online Access: | https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!