Optical properties of crzstals GaSe and InSe doped with Cu

The anisotropy of absorption spectra in the range of the margin of fundamental band of the crystals GaSe and InSe doped with Cu in the percentage quantities up to 0.5 % at. from which the implementation mechanism of the impurity atoms of Cu in the hexagonal crystal grating of the GaSe and InSe c...

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Autores principales:	Evtodiev, Igor, Caraman, Mihail, Anghel, Sergiu
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/d92ca9db702f4f78873054019ee8a92d
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id	oai:doaj.org-article:d92ca9db702f4f78873054019ee8a92d
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spelling	oai:doaj.org-article:d92ca9db702f4f78873054019ee8a92d2021-11-21T12:12:33ZOptical properties of crzstals GaSe and InSe doped with Cu 2537-63651810-648Xhttps://doaj.org/article/d92ca9db702f4f78873054019ee8a92d2005-03-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3186https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The anisotropy of absorption spectra in the range of the margin of fundamental band of the crystals GaSe and InSe doped with Cu in the percentage quantities up to 0.5 % at. from which the implementation mechanism of the impurity atoms of Cu in the hexagonal crystal grating of the GaSe and InSe crystals and the localization energy of the impurity levels in the forbidden energetic band is studied. Evtodiev, IgorCaraman, MihailAnghel, SergiuD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 2, Pp 211-215 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Evtodiev, Igor Caraman, Mihail Anghel, Sergiu Optical properties of crzstals GaSe and InSe doped with Cu
description	The anisotropy of absorption spectra in the range of the margin of fundamental band of the crystals GaSe and InSe doped with Cu in the percentage quantities up to 0.5 % at. from which the implementation mechanism of the impurity atoms of Cu in the hexagonal crystal grating of the GaSe and InSe crystals and the localization energy of the impurity levels in the forbidden energetic band is studied.
format	article
author	Evtodiev, Igor Caraman, Mihail Anghel, Sergiu
author_facet	Evtodiev, Igor Caraman, Mihail Anghel, Sergiu
author_sort	Evtodiev, Igor
title	Optical properties of crzstals GaSe and InSe doped with Cu
title_short	Optical properties of crzstals GaSe and InSe doped with Cu
title_full	Optical properties of crzstals GaSe and InSe doped with Cu
title_fullStr	Optical properties of crzstals GaSe and InSe doped with Cu
title_full_unstemmed	Optical properties of crzstals GaSe and InSe doped with Cu
title_sort	optical properties of crzstals gase and inse doped with cu
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/d92ca9db702f4f78873054019ee8a92d
work_keys_str_mv	AT evtodievigor opticalpropertiesofcrzstalsgaseandinsedopedwithcu AT caramanmihail opticalpropertiesofcrzstalsgaseandinsedopedwithcu AT anghelsergiu opticalpropertiesofcrzstalsgaseandinsedopedwithcu
_version_	1718419153819271168

Optical properties of crzstals GaSe and InSe doped with Cu

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