Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

InGaN quantum dots (QDs) are promising candidates for GaN-based all-visible optoelectronic devices such as micro light-emitting diode and laser. In this study, self-assembled InGaN/GaN multi-quantum dots (MQDs) have been grown by plasma-assisted molecular beam epitaxy on c-plane GaN-on-sapphire temp...

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Detalles Bibliográficos
Autores principales: Xue Zhang, Wenxian Yang, Zhiwei Xing, Haibing Qiu, Ying Gu, Lifeng Bian, Shulong Lu, Hua Qin, Yong Cai, Yuta Suzuki, Sakuya Kaneko, Yuki Matsuda, Shinji Izumi, Yuichi Nakamura, Atsushi Tackeuchi
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
InGaN quantum dots
carrier recombination dynamics
molecular beam epitaxy
Crystallography
QD901-999
Acceso en línea:https://doaj.org/article/d94e1467a5344c748954088c7e2bc951
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