Synthesis and Characterization of Al- and SnO2-Doped ZnO Thermoelectric Thin Films

The effect of SnO2 addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al2O3 substrates was investigated. T...

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Autores principales:	Giovanna Latronico, Saurabh Singh, Paolo Mele, Abdalla Darwish, Sergey Sarkisov, Sian Wei Pan, Yukihiro Kawamura, Chihiro Sekine, Takahiro Baba, Takao Mori, Tsunehiro Takeuchi, Ataru Ichinose, Simeon Wilson
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	thermoelectricity Seebeck coefficient thermal conductivity thin film oxides Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/d9581348107f464b816419970f6968a3
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spelling	oai:doaj.org-article:d9581348107f464b816419970f6968a32021-11-25T18:14:45ZSynthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films10.3390/ma142269291996-1944https://doaj.org/article/d9581348107f464b816419970f6968a32021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6929https://doaj.org/toc/1996-1944The effect of SnO<sub>2</sub> addition (0, 1, 2, 4 wt.%) on thermoelectric properties of <i>c</i>-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al<sub>2</sub>O<sub>3</sub> substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO<sub>2</sub> thin film grown on silica, with a power factor (<i>PF</i>) of 211.8 μW/m·K<sup>2</sup> at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. <i>PF</i> was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K<sup>2</sup>) while thermal conductivity <i>κ</i> was reduced about four times.Giovanna LatronicoSaurabh SinghPaolo MeleAbdalla DarwishSergey SarkisovSian Wei PanYukihiro KawamuraChihiro SekineTakahiro BabaTakao MoriTsunehiro TakeuchiAtaru IchinoseSimeon WilsonMDPI AGarticlethermoelectricitySeebeck coefficientthermal conductivitythin filmoxidesTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6929, p 6929 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	thermoelectricity Seebeck coefficient thermal conductivity thin film oxides Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	thermoelectricity Seebeck coefficient thermal conductivity thin film oxides Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Giovanna Latronico Saurabh Singh Paolo Mele Abdalla Darwish Sergey Sarkisov Sian Wei Pan Yukihiro Kawamura Chihiro Sekine Takahiro Baba Takao Mori Tsunehiro Takeuchi Ataru Ichinose Simeon Wilson Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films
description	The effect of SnO<sub>2</sub> addition (0, 1, 2, 4 wt.%) on thermoelectric properties of <i>c</i>-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al<sub>2</sub>O<sub>3</sub> substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO<sub>2</sub> thin film grown on silica, with a power factor (<i>PF</i>) of 211.8 μW/m·K<sup>2</sup> at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. <i>PF</i> was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K<sup>2</sup>) while thermal conductivity <i>κ</i> was reduced about four times.
format	article
author	Giovanna Latronico Saurabh Singh Paolo Mele Abdalla Darwish Sergey Sarkisov Sian Wei Pan Yukihiro Kawamura Chihiro Sekine Takahiro Baba Takao Mori Tsunehiro Takeuchi Ataru Ichinose Simeon Wilson
author_facet	Giovanna Latronico Saurabh Singh Paolo Mele Abdalla Darwish Sergey Sarkisov Sian Wei Pan Yukihiro Kawamura Chihiro Sekine Takahiro Baba Takao Mori Tsunehiro Takeuchi Ataru Ichinose Simeon Wilson
author_sort	Giovanna Latronico
title	Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films
title_short	Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films
title_full	Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films
title_fullStr	Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films
title_full_unstemmed	Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films
title_sort	synthesis and characterization of al- and sno<sub>2</sub>-doped zno thermoelectric thin films
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/d9581348107f464b816419970f6968a3
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Synthesis and Characterization of Al- and SnO<sub>2</sub>-Doped ZnO Thermoelectric Thin Films

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