Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling

Abstract Hot electrons established by the absorption of high-energy photons typically thermalize on a picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated relaxation pathways. Here it is shown that a strong hot carrier distribution can be produced using a type-II...

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Autores principales: Hamidreza Esmaielpour, Vincent R. Whiteside, Herath P. Piyathilaka, Sangeetha Vijeyaragunathan, Bin Wang, Echo Adcock-Smith, Kenneth P. Roberts, Tetsuya D. Mishima, Michael B. Santos, Alan D. Bristow, Ian R. Sellers
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Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/d9f5f1d9085f4669a7ba19f8c0b761d5
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spelling oai:doaj.org-article:d9f5f1d9085f4669a7ba19f8c0b761d52021-12-02T15:08:43ZEnhanced hot electron lifetimes in quantum wells with inhibited phonon coupling10.1038/s41598-018-30894-92045-2322https://doaj.org/article/d9f5f1d9085f4669a7ba19f8c0b761d52018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-30894-9https://doaj.org/toc/2045-2322Abstract Hot electrons established by the absorption of high-energy photons typically thermalize on a picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated relaxation pathways. Here it is shown that a strong hot carrier distribution can be produced using a type-II quantum well structure. In such systems it is shown that the dominant hot carrier thermalization process is limited by the radiative recombination lifetime of electrons with reduced wavefunction overlap with holes. It is proposed that the subsequent reabsorption of acoustic and optical phonons is facilitated by a mismatch in phonon dispersions at the InAs-AlAsSb interface and serves to further stabilize hot electrons in this system. This lengthens the time scale for thermalization to nanoseconds and results in a hot electron distribution with a temperature of 490 K for a quantum well structure under steady-state illumination at room temperature.Hamidreza EsmaielpourVincent R. WhitesideHerath P. PiyathilakaSangeetha VijeyaragunathanBin WangEcho Adcock-SmithKenneth P. RobertsTetsuya D. MishimaMichael B. SantosAlan D. BristowIan R. SellersNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Hamidreza Esmaielpour
Vincent R. Whiteside
Herath P. Piyathilaka
Sangeetha Vijeyaragunathan
Bin Wang
Echo Adcock-Smith
Kenneth P. Roberts
Tetsuya D. Mishima
Michael B. Santos
Alan D. Bristow
Ian R. Sellers
Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
description Abstract Hot electrons established by the absorption of high-energy photons typically thermalize on a picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated relaxation pathways. Here it is shown that a strong hot carrier distribution can be produced using a type-II quantum well structure. In such systems it is shown that the dominant hot carrier thermalization process is limited by the radiative recombination lifetime of electrons with reduced wavefunction overlap with holes. It is proposed that the subsequent reabsorption of acoustic and optical phonons is facilitated by a mismatch in phonon dispersions at the InAs-AlAsSb interface and serves to further stabilize hot electrons in this system. This lengthens the time scale for thermalization to nanoseconds and results in a hot electron distribution with a temperature of 490 K for a quantum well structure under steady-state illumination at room temperature.
format article
author Hamidreza Esmaielpour
Vincent R. Whiteside
Herath P. Piyathilaka
Sangeetha Vijeyaragunathan
Bin Wang
Echo Adcock-Smith
Kenneth P. Roberts
Tetsuya D. Mishima
Michael B. Santos
Alan D. Bristow
Ian R. Sellers
author_facet Hamidreza Esmaielpour
Vincent R. Whiteside
Herath P. Piyathilaka
Sangeetha Vijeyaragunathan
Bin Wang
Echo Adcock-Smith
Kenneth P. Roberts
Tetsuya D. Mishima
Michael B. Santos
Alan D. Bristow
Ian R. Sellers
author_sort Hamidreza Esmaielpour
title Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
title_short Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
title_full Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
title_fullStr Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
title_full_unstemmed Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
title_sort enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/d9f5f1d9085f4669a7ba19f8c0b761d5
work_keys_str_mv AT hamidrezaesmaielpour enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT vincentrwhiteside enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT herathppiyathilaka enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT sangeethavijeyaragunathan enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT binwang enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT echoadcocksmith enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT kennethproberts enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT tetsuyadmishima enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT michaelbsantos enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT alandbristow enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
AT ianrsellers enhancedhotelectronlifetimesinquantumwellswithinhibitedphononcoupling
_version_ 1718388031088492544