Office, M. E. (2021). Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472. MDPI AG.
Style de citation Chicago (17e éd.)Office, Materials Editorial. Correction: Kirste Et Al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472. MDPI AG, 2021.
Style de citation MLA (8e éd.)Office, Materials Editorial. Correction: Kirste Et Al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472. MDPI AG, 2021.
Attention : ces citations peuvent ne pas être correctes à 100%.