Cita APA (7a ed.)

Office, M. E. (2021). Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472. MDPI AG.

Cita Chicago Style (17a ed.)

Office, Materials Editorial. Correction: Kirste Et Al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472. MDPI AG, 2021.

Cita MLA (8a ed.)

Office, Materials Editorial. Correction: Kirste Et Al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472. MDPI AG, 2021.