Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472

The Materials Editorial Office would like to make the following change to this paper [...]

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Autor principal:	Materials Editorial Office
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	n/a Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
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spelling	oai:doaj.org-article:da19e0d30867452eab8c13e16facb62c2021-11-25T18:15:17ZCorrection: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 547210.3390/ma142269691996-1944https://doaj.org/article/da19e0d30867452eab8c13e16facb62c2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6969https://doaj.org/toc/1996-1944The Materials Editorial Office would like to make the following change to this paper [...]Materials Editorial OfficeMDPI AGarticlen/aTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6969, p 6969 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	n/a Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	n/a Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Materials Editorial Office Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472
description	The Materials Editorial Office would like to make the following change to this paper [...]
format	article
author	Materials Editorial Office
author_facet	Materials Editorial Office
author_sort	Materials Editorial Office
title	Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472
title_short	Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472
title_full	Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472
title_fullStr	Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472
title_full_unstemmed	Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472
title_sort	correction: kirste et al. structural analysis of low defect ammonothermally grown gan wafers by borrmann effect x-ray topography. <i>materials</i> 2021, <i>14</i>, 5472
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/da19e0d30867452eab8c13e16facb62c
work_keys_str_mv	AT materialseditorialoffice correctionkirsteetalstructuralanalysisoflowdefectammonothermallygrownganwafersbyborrmanneffectxraytopographyimaterialsi2021i14i5472
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Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. <i>Materials</i> 2021, <i>14</i>, 5472

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