Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/da8a16dbf0ac404aacc21d8661d37272 |
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| Sumario: | Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state is a topic of ongoing exploration. Several factors such as circuit configuration, substrates, and electronic measurement conditions can affect probing the intrinsic properties of these materials and complicate the conclusive outcome of such exploration. The importance of maintaining the same experimental conditions for a comparative study of these materials in as-grown and freestanding states is discussed here. |
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