Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions

Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state...

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Autor principal: Saidur Rahman Bakaul
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Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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spelling oai:doaj.org-article:da8a16dbf0ac404aacc21d8661d372722021-12-01T18:52:06ZElectrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions2158-322610.1063/5.0055096https://doaj.org/article/da8a16dbf0ac404aacc21d8661d372722021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0055096https://doaj.org/toc/2158-3226Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state is a topic of ongoing exploration. Several factors such as circuit configuration, substrates, and electronic measurement conditions can affect probing the intrinsic properties of these materials and complicate the conclusive outcome of such exploration. The importance of maintaining the same experimental conditions for a comparative study of these materials in as-grown and freestanding states is discussed here.Saidur Rahman BakaulAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115310-115310-5 (2021)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
spellingShingle Physics
QC1-999
Saidur Rahman Bakaul
Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
description Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state is a topic of ongoing exploration. Several factors such as circuit configuration, substrates, and electronic measurement conditions can affect probing the intrinsic properties of these materials and complicate the conclusive outcome of such exploration. The importance of maintaining the same experimental conditions for a comparative study of these materials in as-grown and freestanding states is discussed here.
format article
author Saidur Rahman Bakaul
author_facet Saidur Rahman Bakaul
author_sort Saidur Rahman Bakaul
title Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
title_short Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
title_full Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
title_fullStr Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
title_full_unstemmed Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
title_sort electrical characterization of freestanding complex oxide ferroelectrics: artifacts and experimental precautions
publisher AIP Publishing LLC
publishDate 2021
url https://doaj.org/article/da8a16dbf0ac404aacc21d8661d37272
work_keys_str_mv AT saidurrahmanbakaul electricalcharacterizationoffreestandingcomplexoxideferroelectricsartifactsandexperimentalprecautions
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