Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions
Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state...
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2021
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oai:doaj.org-article:da8a16dbf0ac404aacc21d8661d372722021-12-01T18:52:06ZElectrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions2158-322610.1063/5.0055096https://doaj.org/article/da8a16dbf0ac404aacc21d8661d372722021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0055096https://doaj.org/toc/2158-3226Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state is a topic of ongoing exploration. Several factors such as circuit configuration, substrates, and electronic measurement conditions can affect probing the intrinsic properties of these materials and complicate the conclusive outcome of such exploration. The importance of maintaining the same experimental conditions for a comparative study of these materials in as-grown and freestanding states is discussed here.Saidur Rahman BakaulAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115310-115310-5 (2021) |
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Physics QC1-999 Saidur Rahman Bakaul Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions |
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Recently, freestanding complex oxide ferroelectric materials have gained attention due to their tremendous potential in electronic and mechanical engineering applications. Whether these materials in a freestanding form exhibit intrinsically different behavior than in a strongly bonded as-grown state is a topic of ongoing exploration. Several factors such as circuit configuration, substrates, and electronic measurement conditions can affect probing the intrinsic properties of these materials and complicate the conclusive outcome of such exploration. The importance of maintaining the same experimental conditions for a comparative study of these materials in as-grown and freestanding states is discussed here. |
format |
article |
author |
Saidur Rahman Bakaul |
author_facet |
Saidur Rahman Bakaul |
author_sort |
Saidur Rahman Bakaul |
title |
Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions |
title_short |
Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions |
title_full |
Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions |
title_fullStr |
Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions |
title_full_unstemmed |
Electrical characterization of freestanding complex oxide ferroelectrics: Artifacts and experimental precautions |
title_sort |
electrical characterization of freestanding complex oxide ferroelectrics: artifacts and experimental precautions |
publisher |
AIP Publishing LLC |
publishDate |
2021 |
url |
https://doaj.org/article/da8a16dbf0ac404aacc21d8661d37272 |
work_keys_str_mv |
AT saidurrahmanbakaul electricalcharacterizationoffreestandingcomplexoxideferroelectricsartifactsandexperimentalprecautions |
_version_ |
1718404660080934912 |