Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments

Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or...

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Autores principales:	Ruddy Frank H., Ottaviani Laurent, Lyoussi Abdallah, Destouches Christophe, Palais Olivier, Reynard-Carette Christelle
Formato:	article
Lenguaje:	EN
Publicado:	EDP Sciences 2021
Materias:	neutron detectors silicon carbide sic semiconductor radiation damage Physics QC1-999
Acceso en línea:	https://doaj.org/article/db056da484864a0b847e013b63a426be
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spelling	oai:doaj.org-article:db056da484864a0b847e013b63a426be2021-12-02T17:12:46ZPerformance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments2100-014X10.1051/epjconf/202125311003https://doaj.org/article/db056da484864a0b847e013b63a426be2021-01-01T00:00:00Zhttps://www.epj-conferences.org/articles/epjconf/pdf/2021/07/epjconf_animma2021_11003.pdfhttps://doaj.org/toc/2100-014XSilicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantlingdecommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high-radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.Ruddy Frank H.Ottaviani LaurentLyoussi AbdallahDestouches ChristophePalais OlivierReynard-Carette ChristelleEDP Sciencesarticleneutron detectorssilicon carbidesicsemiconductorradiation damagePhysicsQC1-999ENEPJ Web of Conferences, Vol 253, p 11003 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	neutron detectors silicon carbide sic semiconductor radiation damage Physics QC1-999
spellingShingle	neutron detectors silicon carbide sic semiconductor radiation damage Physics QC1-999 Ruddy Frank H. Ottaviani Laurent Lyoussi Abdallah Destouches Christophe Palais Olivier Reynard-Carette Christelle Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
description	Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantlingdecommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high-radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.
format	article
author	Ruddy Frank H. Ottaviani Laurent Lyoussi Abdallah Destouches Christophe Palais Olivier Reynard-Carette Christelle
author_facet	Ruddy Frank H. Ottaviani Laurent Lyoussi Abdallah Destouches Christophe Palais Olivier Reynard-Carette Christelle
author_sort	Ruddy Frank H.
title	Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
title_short	Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
title_full	Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
title_fullStr	Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
title_full_unstemmed	Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments
title_sort	performance and applications of silicon carbide neutron detectors in harsh nuclear environments
publisher	EDP Sciences
publishDate	2021
url	https://doaj.org/article/db056da484864a0b847e013b63a426be
work_keys_str_mv	AT ruddyfrankh performanceandapplicationsofsiliconcarbideneutrondetectorsinharshnuclearenvironments AT ottavianilaurent performanceandapplicationsofsiliconcarbideneutrondetectorsinharshnuclearenvironments AT lyoussiabdallah performanceandapplicationsofsiliconcarbideneutrondetectorsinharshnuclearenvironments AT destoucheschristophe performanceandapplicationsofsiliconcarbideneutrondetectorsinharshnuclearenvironments AT palaisolivier performanceandapplicationsofsiliconcarbideneutrondetectorsinharshnuclearenvironments AT reynardcarettechristelle performanceandapplicationsofsiliconcarbideneutrondetectorsinharshnuclearenvironments
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Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments

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