Thermal Analysis of Metal-Organic Precursors for Functional Cu:ΝiOx Hole Transporting Layer in Inverted Perovskite Solar Cells: Role of Solution Combustion Chemistry in Cu:ΝiOx Thin Films Processing
Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiO<sub>x</sub> using different molar ratios (w/o, 0.1 and 1.5) of fuel a...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/db260364383b4a53b8984acf91c33020 |
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| Sumario: | Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiO<sub>x</sub> using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing temperatures 150, 200, and 300 °C. The solution combustion synthesis process, in both thin films and bulk Cu:NiO<sub>x</sub>, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiO<sub>x</sub> thin films show a more gradual mass loss while the bulk Cu:NiO<sub>x</sub> exhibits a distinct combustion process. The thin films can crystallize to Cu:NiO<sub>x</sub> at an annealing temperature of 300 °C, irrespective of the Acac/Oxidizer ratio, whereas lower annealing temperatures (150 and 200 °C) produce amorphous materials. A detail characterization study of solution combustion synthesized Cu:NiO<sub>x</sub>, including XPS, UV-Vis, AFM, and Contact angle measurements, is presented. Finally, 50 nm Cu:NiO<sub>x</sub> thin films are introduced as HTLs within the inverted perovskite solar cell device architecture. The Cu:NiO<sub>x</sub> HTL annealed at 150 and 200 °C provided PVSCs with limited functionality, whereas efficient triple-cation Cs<sub>0.04</sub>(MA<sub>0.17</sub>FA<sub>0.83</sub>)<sub>0.96</sub> Pb(I<sub>0.83</sub>Br<sub>0.17</sub>)<sub>3</sub>-based PVSCs achieved for Cu:NiO<sub>x</sub> HTLs for annealing temperature of 300 °C. |
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