Reversible defect engineering in graphene grain boundaries
Engineering the grain boundary size of chemical vapor deposited monolayer graphene can reversibly tune its electronic properties. Here, the authors report a thermodynamic correlation for 100 μm long channels in graphene by reversibly changing its electronic mobilities from 1,000 to 20,000 cm2 V−1 s−...
Guardado en:
| Autores principales: | , , , , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/db3db9ec4b7b4fca9b137584081cd56c |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Engineering the grain boundary size of chemical vapor deposited monolayer graphene can reversibly tune its electronic properties. Here, the authors report a thermodynamic correlation for 100 μm long channels in graphene by reversibly changing its electronic mobilities from 1,000 to 20,000 cm2 V−1 s−1. |
|---|