Reversible defect engineering in graphene grain boundaries

Reversible defect engineering in graphene grain boundaries

Engineering the grain boundary size of chemical vapor deposited monolayer graphene can reversibly tune its electronic properties. Here, the authors report a thermodynamic correlation for 100 μm long channels in graphene by reversibly changing its electronic mobilities from 1,000 to 20,000 cm2 V−1 s−...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Krishna Balasubramanian, Tathagatha Biswas, Priyadarshini Ghosh, Swathi Suran, Abhishek Mishra, Rohan Mishra, Ritesh Sachan, Manish Jain, Manoj Varma, Rudra Pratap, Srinivasan Raghavan
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/db3db9ec4b7b4fca9b137584081cd56c
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares