Reversible defect engineering in graphene grain boundaries
Engineering the grain boundary size of chemical vapor deposited monolayer graphene can reversibly tune its electronic properties. Here, the authors report a thermodynamic correlation for 100 μm long channels in graphene by reversibly changing its electronic mobilities from 1,000 to 20,000 cm2 V−1 s−...
Enregistré dans:
Auteurs principaux: | Krishna Balasubramanian, Tathagatha Biswas, Priyadarshini Ghosh, Swathi Suran, Abhishek Mishra, Rohan Mishra, Ritesh Sachan, Manish Jain, Manoj Varma, Rudra Pratap, Srinivasan Raghavan |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2019
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/db3db9ec4b7b4fca9b137584081cd56c |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Reconciling grain growth and shear-coupled grain boundary migration
par: Spencer L. Thomas, et autres
Publié: (2017) -
Equation of motion for grain boundaries in polycrystals
par: Luchan Zhang, et autres
Publié: (2021) -
Grain boundary engineering of new additive manufactured polycrystalline alloys
par: Frank Abdi, et autres
Publié: (2021) -
Discovery of electrochemically induced grain boundary transitions
par: Jiuyuan Nie, et autres
Publié: (2021) -
Computing grain boundary diagrams of thermodynamic and mechanical properties
par: Chongze Hu, et autres
Publié: (2021)