Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method

Aluminum-doped zinc oxide thin films were deposited on glass substrates by the sol-gel technique. The effect of the Al concentration in the starting solution on the structural and optical properties of ZnO : Al thin films were studied. The molar ratio of the dopant (aluminum nitrate) in the solution...

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Autores principales: Djouadi, D., Aksas, A., Chelouche, A.
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Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
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spelling oai:doaj.org-article:db5b83b4f86a4b2fb8d6482679158fdd2021-11-21T12:01:20ZAl-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method2537-63651810-648Xhttps://doaj.org/article/db5b83b4f86a4b2fb8d6482679158fdd2012-10-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/21316https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Aluminum-doped zinc oxide thin films were deposited on glass substrates by the sol-gel technique. The effect of the Al concentration in the starting solution on the structural and optical properties of ZnO : Al thin films were studied. The molar ratio of the dopant (aluminum nitrate) in the solution [Al/Zn] was varied between 1% and 3%.The deposition of the layers was realized performed at room temperature by the dip-coating technique. The obtained films were inserted to a furnace and annealed at 500°C for 60 min. The X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and optical transmittance were used to characterize the elaborated samples. XRD results show that the films have hexagonal structure and grow preferentially along the crystallographic direction (002). The average crystallite size estimated by the Scherrer formula is about 5 nm. FT-IR spectrometry showed all types of molecular vibrations in the films and confirmed the formation of a ZnO semiconductor in the samples. The refractive index and thickness of layers were determined from the optical transmittance spectra. We observed that an increase in the Al content in the solution leads to an increase in the films thickness and a decrease in their refractive index.Djouadi, D.Aksas, A.Chelouche, A.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 3, Pp 229-234 (2012)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Djouadi, D.
Aksas, A.
Chelouche, A.
Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method
description Aluminum-doped zinc oxide thin films were deposited on glass substrates by the sol-gel technique. The effect of the Al concentration in the starting solution on the structural and optical properties of ZnO : Al thin films were studied. The molar ratio of the dopant (aluminum nitrate) in the solution [Al/Zn] was varied between 1% and 3%.The deposition of the layers was realized performed at room temperature by the dip-coating technique. The obtained films were inserted to a furnace and annealed at 500°C for 60 min. The X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and optical transmittance were used to characterize the elaborated samples. XRD results show that the films have hexagonal structure and grow preferentially along the crystallographic direction (002). The average crystallite size estimated by the Scherrer formula is about 5 nm. FT-IR spectrometry showed all types of molecular vibrations in the films and confirmed the formation of a ZnO semiconductor in the samples. The refractive index and thickness of layers were determined from the optical transmittance spectra. We observed that an increase in the Al content in the solution leads to an increase in the films thickness and a decrease in their refractive index.
format article
author Djouadi, D.
Aksas, A.
Chelouche, A.
author_facet Djouadi, D.
Aksas, A.
Chelouche, A.
author_sort Djouadi, D.
title Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method
title_short Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method
title_full Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method
title_fullStr Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method
title_full_unstemmed Al-doping effects on the structural and optical properties of ZnO: al thin films prepared by the sol-gel method
title_sort al-doping effects on the structural and optical properties of zno: al thin films prepared by the sol-gel method
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2012
url https://doaj.org/article/db5b83b4f86a4b2fb8d6482679158fdd
work_keys_str_mv AT djouadid aldopingeffectsonthestructuralandopticalpropertiesofznoalthinfilmspreparedbythesolgelmethod
AT aksasa aldopingeffectsonthestructuralandopticalpropertiesofznoalthinfilmspreparedbythesolgelmethod
AT chelouchea aldopingeffectsonthestructuralandopticalpropertiesofznoalthinfilmspreparedbythesolgelmethod
_version_ 1718419335010058240