Polariton lasing in InGaN quantum wells at room temperature
In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg r...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Institue of Optics and Electronics, Chinese Academy of Sciences
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/dbc1cd02267d413cbf5e6ef74dee9f25 |
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| Sumario: | In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors. |
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