Gallium oxide nanowires for UV detection with enhanced growth and material properties

Abstract In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires ex...

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Autores principales:	Badriyah Alhalaili, Ryan James Bunk, Howard Mao, Hilal Cansizoglu, Ruxandra Vidu, Jerry Woodall, M. Saif Islam
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/dbe8d3e9650e4b95b1857b6eef848506
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spelling	oai:doaj.org-article:dbe8d3e9650e4b95b1857b6eef8485062021-12-02T16:18:02ZGallium oxide nanowires for UV detection with enhanced growth and material properties10.1038/s41598-020-78326-x2045-2322https://doaj.org/article/dbe8d3e9650e4b95b1857b6eef8485062020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78326-xhttps://doaj.org/toc/2045-2322Abstract In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, increasing their sensitivity for detection of chemical substances and light. In this work, we explore a simple and inexpensive method of growing high-density gallium oxide nanowires at high temperatures. Gallium oxide nanowire growth can be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 °C) in the presence of trace amounts of oxygen. This process can be optimized to large-scale production to grow high-quality, dense and long Ga2O3 nanowires. We show the results of morphological, structural, electrical and optical characterization of the β-Ga2O3 nanowires including the optical bandgap and photoconductance. The influence of density on these Ga2O3 nanowires and their properties will be examined in order to determine the optimum configuration for the detection of UV light.Badriyah AlhalailiRyan James BunkHoward MaoHilal CansizogluRuxandra ViduJerry WoodallM. Saif IslamNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-14 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Badriyah Alhalaili Ryan James Bunk Howard Mao Hilal Cansizoglu Ruxandra Vidu Jerry Woodall M. Saif Islam Gallium oxide nanowires for UV detection with enhanced growth and material properties
description	Abstract In the last decade, interest in the use of beta gallium oxide (β-Ga2O3) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, increasing their sensitivity for detection of chemical substances and light. In this work, we explore a simple and inexpensive method of growing high-density gallium oxide nanowires at high temperatures. Gallium oxide nanowire growth can be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 °C) in the presence of trace amounts of oxygen. This process can be optimized to large-scale production to grow high-quality, dense and long Ga2O3 nanowires. We show the results of morphological, structural, electrical and optical characterization of the β-Ga2O3 nanowires including the optical bandgap and photoconductance. The influence of density on these Ga2O3 nanowires and their properties will be examined in order to determine the optimum configuration for the detection of UV light.
format	article
author	Badriyah Alhalaili Ryan James Bunk Howard Mao Hilal Cansizoglu Ruxandra Vidu Jerry Woodall M. Saif Islam
author_facet	Badriyah Alhalaili Ryan James Bunk Howard Mao Hilal Cansizoglu Ruxandra Vidu Jerry Woodall M. Saif Islam
author_sort	Badriyah Alhalaili
title	Gallium oxide nanowires for UV detection with enhanced growth and material properties
title_short	Gallium oxide nanowires for UV detection with enhanced growth and material properties
title_full	Gallium oxide nanowires for UV detection with enhanced growth and material properties
title_fullStr	Gallium oxide nanowires for UV detection with enhanced growth and material properties
title_full_unstemmed	Gallium oxide nanowires for UV detection with enhanced growth and material properties
title_sort	gallium oxide nanowires for uv detection with enhanced growth and material properties
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/dbe8d3e9650e4b95b1857b6eef848506
work_keys_str_mv	AT badriyahalhalaili galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties AT ryanjamesbunk galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties AT howardmao galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties AT hilalcansizoglu galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties AT ruxandravidu galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties AT jerrywoodall galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties AT msaifislam galliumoxidenanowiresforuvdetectionwithenhancedgrowthandmaterialproperties
_version_	1718384261063507968

Gallium oxide nanowires for UV detection with enhanced growth and material properties

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