Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Controlling the composition and crystal phase of layered heterostructures is important. Here, the authors report the liquid-phase epitaxial growth of Sn0.5W0.5S2 nanosheets with 83% metallic phase on SnS2 nanoplates, which are used as 100 ppb level chemiresistive gas sensors at room temperature.

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Autores principales:	Xiaoshan Wang, Zhiwei Wang, Jindong Zhang, Xiang Wang, Zhipeng Zhang, Jialiang Wang, Zhaohua Zhu, Zhuoyao Li, Yao Liu, Xuefeng Hu, Junwen Qiu, Guohua Hu, Bo Chen, Ning Wang, Qiyuan He, Junze Chen, Jiaxu Yan, Wei Zhang, Tawfique Hasan, Shaozhou Li, Hai Li, Hua Zhang, Qiang Wang, Xiao Huang, Wei Huang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/dc2d72aa346341749d209e5828ab5df7
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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spelling	oai:doaj.org-article:dc2d72aa346341749d209e5828ab5df72021-12-02T14:40:07ZRealization of vertical metal semiconductor heterostructures via solution phase epitaxy10.1038/s41467-018-06053-z2041-1723https://doaj.org/article/dc2d72aa346341749d209e5828ab5df72018-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-06053-zhttps://doaj.org/toc/2041-1723Controlling the composition and crystal phase of layered heterostructures is important. Here, the authors report the liquid-phase epitaxial growth of Sn0.5W0.5S2 nanosheets with 83% metallic phase on SnS2 nanoplates, which are used as 100 ppb level chemiresistive gas sensors at room temperature.Xiaoshan WangZhiwei WangJindong ZhangXiang WangZhipeng ZhangJialiang WangZhaohua ZhuZhuoyao LiYao LiuXuefeng HuJunwen QiuGuohua HuBo ChenNing WangQiyuan HeJunze ChenJiaxu YanWei ZhangTawfique HasanShaozhou LiHai LiHua ZhangQiang WangXiao HuangWei HuangNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-11 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiaoshan Wang Zhiwei Wang Jindong Zhang Xiang Wang Zhipeng Zhang Jialiang Wang Zhaohua Zhu Zhuoyao Li Yao Liu Xuefeng Hu Junwen Qiu Guohua Hu Bo Chen Ning Wang Qiyuan He Junze Chen Jiaxu Yan Wei Zhang Tawfique Hasan Shaozhou Li Hai Li Hua Zhang Qiang Wang Xiao Huang Wei Huang Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
description	Controlling the composition and crystal phase of layered heterostructures is important. Here, the authors report the liquid-phase epitaxial growth of Sn0.5W0.5S2 nanosheets with 83% metallic phase on SnS2 nanoplates, which are used as 100 ppb level chemiresistive gas sensors at room temperature.
format	article
author	Xiaoshan Wang Zhiwei Wang Jindong Zhang Xiang Wang Zhipeng Zhang Jialiang Wang Zhaohua Zhu Zhuoyao Li Yao Liu Xuefeng Hu Junwen Qiu Guohua Hu Bo Chen Ning Wang Qiyuan He Junze Chen Jiaxu Yan Wei Zhang Tawfique Hasan Shaozhou Li Hai Li Hua Zhang Qiang Wang Xiao Huang Wei Huang
author_facet	Xiaoshan Wang Zhiwei Wang Jindong Zhang Xiang Wang Zhipeng Zhang Jialiang Wang Zhaohua Zhu Zhuoyao Li Yao Liu Xuefeng Hu Junwen Qiu Guohua Hu Bo Chen Ning Wang Qiyuan He Junze Chen Jiaxu Yan Wei Zhang Tawfique Hasan Shaozhou Li Hai Li Hua Zhang Qiang Wang Xiao Huang Wei Huang
author_sort	Xiaoshan Wang
title	Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_short	Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_full	Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_fullStr	Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_full_unstemmed	Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
title_sort	realization of vertical metal semiconductor heterostructures via solution phase epitaxy
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/dc2d72aa346341749d209e5828ab5df7
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_version_	1718390447365160960

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

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