A simple and robust approach to reducing contact resistance in organic transistors
Minimizing contact effects in organic semiconductor-based devices is a key step toward the development of a low-cost technology for next-generation electronics. Here, the authors reduce contact resistance in organic devices by engineering electrodes with high work function surface domains.
Guardado en:
Autores principales: | Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain McCulloch, John E. Anthony, Lee J. Richter, Dean M. DeLongchamp, Oana D. Jurchescu |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/dcda3fcbac0c45089d8acb0dec9f6ac5 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Mobility overestimation due to gated contacts in organic field-effect transistors
por: Emily G. Bittle, et al.
Publicado: (2016) -
Suppressing bias stress degradation in high performance solution processed organic transistors operating in air
por: Hamna F. Iqbal, et al.
Publicado: (2021) -
Polarized X-ray scattering measures molecular orientation in polymer-grafted nanoparticles
por: Subhrangsu Mukherjee, et al.
Publicado: (2021) -
Contact patterning by laser printing for flexible electronics on paper
por: Angela F. Harper, et al.
Publicado: (2019) -
N-type organic electrochemical transistors with stability in water
por: Alexander Giovannitti, et al.
Publicado: (2016)