Semiconductor-less vertical transistor with I ON/I OFF of 106

Semiconductor-less vertical transistor with I ON/I OFF of 106

In field-effect transistors, a semiconducting channel is indispensable for device switching. Here, the authors demonstrate semiconductor-less switching via modulation of the field emission barrier height across a graphene-hBN interface with ON/OFF ratio of 106.

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Detalles Bibliográficos
Autores principales: Jun-Ho Lee, Dong Hoon Shin, Heejun Yang, Nae Bong Jeong, Do-Hyun Park, Kenji Watanabe, Takashi Taniguchi, Eunah Kim, Sang Wook Lee, Sung Ho Jhang, Bae Ho Park, Young Kuk, Hyun-Jong Chung
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/dd997389662f44b2b26805244fef5d8e
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