Size-tunable Lateral Confinement in Monolayer Semiconductors

Abstract Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spi...

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Autores principales:	Guohua Wei, David A. Czaplewski, Erik J. Lenferink, Teodor K. Stanev, Il Woong Jung, Nathaniel P. Stern
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/de36ec3376e54592bd2d162a424e063a
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spelling	oai:doaj.org-article:de36ec3376e54592bd2d162a424e063a2021-12-02T16:06:06ZSize-tunable Lateral Confinement in Monolayer Semiconductors10.1038/s41598-017-03594-z2045-2322https://doaj.org/article/de36ec3376e54592bd2d162a424e063a2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03594-zhttps://doaj.org/toc/2045-2322Abstract Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems.Guohua WeiDavid A. CzaplewskiErik J. LenferinkTeodor K. StanevIl Woong JungNathaniel P. SternNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Guohua Wei David A. Czaplewski Erik J. Lenferink Teodor K. Stanev Il Woong Jung Nathaniel P. Stern Size-tunable Lateral Confinement in Monolayer Semiconductors
description	Abstract Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems.
format	article
author	Guohua Wei David A. Czaplewski Erik J. Lenferink Teodor K. Stanev Il Woong Jung Nathaniel P. Stern
author_facet	Guohua Wei David A. Czaplewski Erik J. Lenferink Teodor K. Stanev Il Woong Jung Nathaniel P. Stern
author_sort	Guohua Wei
title	Size-tunable Lateral Confinement in Monolayer Semiconductors
title_short	Size-tunable Lateral Confinement in Monolayer Semiconductors
title_full	Size-tunable Lateral Confinement in Monolayer Semiconductors
title_fullStr	Size-tunable Lateral Confinement in Monolayer Semiconductors
title_full_unstemmed	Size-tunable Lateral Confinement in Monolayer Semiconductors
title_sort	size-tunable lateral confinement in monolayer semiconductors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/de36ec3376e54592bd2d162a424e063a
work_keys_str_mv	AT guohuawei sizetunablelateralconfinementinmonolayersemiconductors AT davidaczaplewski sizetunablelateralconfinementinmonolayersemiconductors AT erikjlenferink sizetunablelateralconfinementinmonolayersemiconductors AT teodorkstanev sizetunablelateralconfinementinmonolayersemiconductors AT ilwoongjung sizetunablelateralconfinementinmonolayersemiconductors AT nathanielpstern sizetunablelateralconfinementinmonolayersemiconductors
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Size-tunable Lateral Confinement in Monolayer Semiconductors

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