Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory
Abstract The charge-trapping memory devices with a structure Pt/Al2O3/(Ta2O5) x (TiO2) 1−x /Al2O3/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta2O5) x (TiO2) 1−x and Si substrate was designed to enha...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/de663cb83d0f4b0dacdaab862b024b63 |
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