Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals

Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably involves the formation of contacts with metallic electrodes. As these contacts can dramatically affect the behavior of the device, we study the electronic properties of monolayer Janus MoSSe in contact...

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Autores principales: Ning Zhao, Udo Schwingenschlögl
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/de6d4ecc2f1d4c6780f9efadf79eca33
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spelling oai:doaj.org-article:de6d4ecc2f1d4c6780f9efadf79eca332021-12-02T16:35:47ZDipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals10.1038/s41699-021-00253-w2397-7132https://doaj.org/article/de6d4ecc2f1d4c6780f9efadf79eca332021-08-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00253-whttps://doaj.org/toc/2397-7132Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably involves the formation of contacts with metallic electrodes. As these contacts can dramatically affect the behavior of the device, we study the electronic properties of monolayer Janus MoSSe in contact with different metallic electrodes by first-principles calculations, focusing on the differences in the characteristics of contacts with the two sides of MoSSe. In particular, we demonstrate that the Fermi level pinning is different for the two sides of MoSSe, with the magnitude resembling that of MoS2 or MoSe2, while both sides can form Ohmic contacts with common electrode materials without any further adaptation, which is an outstanding advantage over MoS2 and MoSe2.Ning ZhaoUdo SchwingenschlöglNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-5 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Ning Zhao
Udo Schwingenschlögl
Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
description Abstract Utilizing a two-dimensional material in an electronic device as channel layer inevitably involves the formation of contacts with metallic electrodes. As these contacts can dramatically affect the behavior of the device, we study the electronic properties of monolayer Janus MoSSe in contact with different metallic electrodes by first-principles calculations, focusing on the differences in the characteristics of contacts with the two sides of MoSSe. In particular, we demonstrate that the Fermi level pinning is different for the two sides of MoSSe, with the magnitude resembling that of MoS2 or MoSe2, while both sides can form Ohmic contacts with common electrode materials without any further adaptation, which is an outstanding advantage over MoS2 and MoSe2.
format article
author Ning Zhao
Udo Schwingenschlögl
author_facet Ning Zhao
Udo Schwingenschlögl
author_sort Ning Zhao
title Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
title_short Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
title_full Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
title_fullStr Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
title_full_unstemmed Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals
title_sort dipole-induced ohmic contacts between monolayer janus mosse and bulk metals
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/de6d4ecc2f1d4c6780f9efadf79eca33
work_keys_str_mv AT ningzhao dipoleinducedohmiccontactsbetweenmonolayerjanusmosseandbulkmetals
AT udoschwingenschlogl dipoleinducedohmiccontactsbetweenmonolayerjanusmosseandbulkmetals
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