Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm...
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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/de81f38ffd1f43e58578361acbaa9d7d |
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| Sumario: | Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 106, comparable to the exfoliated flakes. |
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