Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon

Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm...

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Autores principales:	Yijun Xu, Xinyao Shi, Yushuang Zhang, Hongtao Zhang, Qinglin Zhang, Zengli Huang, Xiangfan Xu, Jie Guo, Han Zhang, Litao Sun, Zhongming Zeng, Anlian Pan, Kai Zhang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/de81f38ffd1f43e58578361acbaa9d7d
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spelling	oai:doaj.org-article:de81f38ffd1f43e58578361acbaa9d7d2021-12-02T14:40:41ZEpitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon10.1038/s41467-020-14902-z2041-1723https://doaj.org/article/de81f38ffd1f43e58578361acbaa9d7d2020-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-14902-zhttps://doaj.org/toc/2041-1723Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 106, comparable to the exfoliated flakes.Yijun XuXinyao ShiYushuang ZhangHongtao ZhangQinglin ZhangZengli HuangXiangfan XuJie GuoHan ZhangLitao SunZhongming ZengAnlian PanKai ZhangNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Yijun Xu Xinyao Shi Yushuang Zhang Hongtao Zhang Qinglin Zhang Zengli Huang Xiangfan Xu Jie Guo Han Zhang Litao Sun Zhongming Zeng Anlian Pan Kai Zhang Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
description	Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm2 /Vs at room temperature, respectively and a current on/off ratio of up to 106, comparable to the exfoliated flakes.
format	article
author	Yijun Xu Xinyao Shi Yushuang Zhang Hongtao Zhang Qinglin Zhang Zengli Huang Xiangfan Xu Jie Guo Han Zhang Litao Sun Zhongming Zeng Anlian Pan Kai Zhang
author_facet	Yijun Xu Xinyao Shi Yushuang Zhang Hongtao Zhang Qinglin Zhang Zengli Huang Xiangfan Xu Jie Guo Han Zhang Litao Sun Zhongming Zeng Anlian Pan Kai Zhang
author_sort	Yijun Xu
title	Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
title_short	Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
title_full	Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
title_fullStr	Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
title_full_unstemmed	Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
title_sort	epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/de81f38ffd1f43e58578361acbaa9d7d
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Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon

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