Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon

Direct synthesis of large area crystalline black phosphorus films is still challenging. Here, the authors report growth of high-quality black phosphorus films on insulating silicon substrates through a gas-phase epitaxial growth strategy with field-effect and Hall mobilities of over 1200 and 1400 cm...

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Autores principales: Yijun Xu, Xinyao Shi, Yushuang Zhang, Hongtao Zhang, Qinglin Zhang, Zengli Huang, Xiangfan Xu, Jie Guo, Han Zhang, Litao Sun, Zhongming Zeng, Anlian Pan, Kai Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/de81f38ffd1f43e58578361acbaa9d7d
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