Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption

Abstract The carrier transport characteristics of Sb2Se2Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb2Se2Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (...

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Autores principales:	Shiu-Ming Huang, Shih-Jhe Huang, Ching Hsu, Paritosh V. Wadekar, You-Jhih Yan, Shih-Hsun Yu, Mitch Chou
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/deb68f778d9d4d97965249375dc27a95
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spelling	oai:doaj.org-article:deb68f778d9d4d97965249375dc27a952021-12-02T15:05:40ZEnhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption10.1038/s41598-017-05369-y2045-2322https://doaj.org/article/deb68f778d9d4d97965249375dc27a952017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05369-yhttps://doaj.org/toc/2045-2322Abstract The carrier transport characteristics of Sb2Se2Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb2Se2Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N2 molecular.Shiu-Ming HuangShih-Jhe HuangChing HsuParitosh V. WadekarYou-Jhih YanShih-Hsun YuMitch ChouNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shiu-Ming Huang Shih-Jhe Huang Ching Hsu Paritosh V. Wadekar You-Jhih Yan Shih-Hsun Yu Mitch Chou Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption
description	Abstract The carrier transport characteristics of Sb2Se2Te topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the Sb2Se2Te crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same. MR slopes and the mobilities had the same dependency on temperature over a wide temperature range. All measured data conformed to a linear correlation between MR slope and mobility, supporting our hypothesis that the MR increase and the SdH oscillation enhancement might be caused by mobility enhancement induced by adsorbed N2 molecular.
format	article
author	Shiu-Ming Huang Shih-Jhe Huang Ching Hsu Paritosh V. Wadekar You-Jhih Yan Shih-Hsun Yu Mitch Chou
author_facet	Shiu-Ming Huang Shih-Jhe Huang Ching Hsu Paritosh V. Wadekar You-Jhih Yan Shih-Hsun Yu Mitch Chou
author_sort	Shiu-Ming Huang
title	Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption
title_short	Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption
title_full	Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption
title_fullStr	Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption
title_full_unstemmed	Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption
title_sort	enhancement of carrier transport characteristic in the sb2se2te topological insulators by n2 adsorption
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/deb68f778d9d4d97965249375dc27a95
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_version_	1718388798272831488

Enhancement of carrier transport characteristic in the Sb2Se2Te topological insulators by N2 adsorption

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