High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field

The effect of high-temperature annealing (4001000C) on the development of dislocation rosettes around indents on the (111) plane of GaP crystals has been studied. Features of the development of the shapes of the dislocation rosettes as a function of annealing temperature have been revealed. It has...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Jitaru, Raisa, Pîşkin, Serghei, Tăzlăvan, Victor
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2013
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/dec6dc47348045a9bb82446139459c2f
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:dec6dc47348045a9bb82446139459c2f
record_format	dspace
spelling	oai:doaj.org-article:dec6dc47348045a9bb82446139459c2f2021-11-21T11:59:35ZHigh-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field 2537-63651810-648Xhttps://doaj.org/article/dec6dc47348045a9bb82446139459c2f2013-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2013/article/29771https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The effect of high-temperature annealing (4001000C) on the development of dislocation rosettes around indents on the (111) plane of GaP crystals has been studied. Features of the development of the shapes of the dislocation rosettes as a function of annealing temperature have been revealed. It has been found that the dislocation structure changes. Experimental data have shown that, at high-temperature annealing of plastic deformation, a linear relationship between the length of dislocation rosette arms and annealing temperature was not observed unlike a low-temperature region. A mechanism for the effect of high-temperature annealing on the change in the shape and size of dislocation rosettes has been proposed. The mechanism is based on the active participation of binary cross slip of dislocations in the heterogeneous stress field under microindentation.Jitaru, RaisaPîşkin, SergheiTăzlăvan, VictorD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 12, Iss 3-4, Pp 150-158 (2013)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Jitaru, Raisa Pîşkin, Serghei Tăzlăvan, Victor High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
description	The effect of high-temperature annealing (4001000C) on the development of dislocation rosettes around indents on the (111) plane of GaP crystals has been studied. Features of the development of the shapes of the dislocation rosettes as a function of annealing temperature have been revealed. It has been found that the dislocation structure changes. Experimental data have shown that, at high-temperature annealing of plastic deformation, a linear relationship between the length of dislocation rosette arms and annealing temperature was not observed unlike a low-temperature region. A mechanism for the effect of high-temperature annealing on the change in the shape and size of dislocation rosettes has been proposed. The mechanism is based on the active participation of binary cross slip of dislocations in the heterogeneous stress field under microindentation.
format	article
author	Jitaru, Raisa Pîşkin, Serghei Tăzlăvan, Victor
author_facet	Jitaru, Raisa Pîşkin, Serghei Tăzlăvan, Victor
author_sort	Jitaru, Raisa
title	High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
title_short	High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
title_full	High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
title_fullStr	High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
title_full_unstemmed	High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
title_sort	high-temperature annealing of plastic deformation of gap single crystals in a heterogeneous stress field
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2013
url	https://doaj.org/article/dec6dc47348045a9bb82446139459c2f
work_keys_str_mv	AT jitaruraisa hightemperatureannealingofplasticdeformationofgapsinglecrystalsinaheterogeneousstressfield AT piskinserghei hightemperatureannealingofplasticdeformationofgapsinglecrystalsinaheterogeneousstressfield AT tazlavanvictor hightemperatureannealingofplasticdeformationofgapsinglecrystalsinaheterogeneousstressfield
_version_	1718419335373914112

High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field

Ejemplares similares