High-temperature annealing of plastic deformation of GaP single crystals in a heterogeneous stress field
The effect of high-temperature annealing (4001000C) on the development of dislocation rosettes around indents on the (111) plane of GaP crystals has been studied. Features of the development of the shapes of the dislocation rosettes as a function of annealing temperature have been revealed. It has...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2013
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/dec6dc47348045a9bb82446139459c2f |
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