Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes

Abstract Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serv...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Lion Augel, Jon Schlipf, Sergej Bullert, Sebastian Bürzele, Jörg Schulze, Inga A. Fischer
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/defd089bd01e4b1bafac70a4daf15232
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:defd089bd01e4b1bafac70a4daf15232
record_format	dspace
spelling	oai:doaj.org-article:defd089bd01e4b1bafac70a4daf152322021-12-02T13:33:45ZPhotonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes10.1038/s41598-021-85012-z2045-2322https://doaj.org/article/defd089bd01e4b1bafac70a4daf152322021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85012-zhttps://doaj.org/toc/2045-2322Abstract Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.Lion AugelJon SchlipfSergej BullertSebastian BürzeleJörg SchulzeInga A. FischerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Lion Augel Jon Schlipf Sergej Bullert Sebastian Bürzele Jörg Schulze Inga A. Fischer Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
description	Abstract Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.
format	article
author	Lion Augel Jon Schlipf Sergej Bullert Sebastian Bürzele Jörg Schulze Inga A. Fischer
author_facet	Lion Augel Jon Schlipf Sergej Bullert Sebastian Bürzele Jörg Schulze Inga A. Fischer
author_sort	Lion Augel
title	Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
title_short	Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
title_full	Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
title_fullStr	Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
title_full_unstemmed	Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
title_sort	photonic-plasmonic mode coupling in nanopillar ge-on-si pin photodiodes
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/defd089bd01e4b1bafac70a4daf15232
work_keys_str_mv	AT lionaugel photonicplasmonicmodecouplinginnanopillargeonsipinphotodiodes AT jonschlipf photonicplasmonicmodecouplinginnanopillargeonsipinphotodiodes AT sergejbullert photonicplasmonicmodecouplinginnanopillargeonsipinphotodiodes AT sebastianburzele photonicplasmonicmodecouplinginnanopillargeonsipinphotodiodes AT jorgschulze photonicplasmonicmodecouplinginnanopillargeonsipinphotodiodes AT ingaafischer photonicplasmonicmodecouplinginnanopillargeonsipinphotodiodes
_version_	1718392886898196480

Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes

Ejemplares similares