Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching

Abstract In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper; CIC) were obtained by the wet etching process. The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. There was no delamination or cracking phenomenon of the...

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Autores principales:	Ray-Hua Horng, Shreekant Sinha, Fu-Gow Tarntair, Hsiang-An Feng, Chia-Wei Tu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/deff4a8eb7c44ac892736feab6798042
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spelling	oai:doaj.org-article:deff4a8eb7c44ac892736feab67980422021-12-02T15:00:19ZDicing of composite substrate for thin film AlGaInP power LEDs by wet etching10.1038/s41598-021-90425-x2045-2322https://doaj.org/article/deff4a8eb7c44ac892736feab67980422021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-90425-xhttps://doaj.org/toc/2045-2322Abstract In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper; CIC) were obtained by the wet etching process. The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. There was no delamination or cracking phenomenon of the LED epilayer which often occurs by laser or mechanical dicing. The chip area was 1140 μm × 1140 μm and the channel length was 360 μm. The structure of the CIC substrate was a sandwich structure and consisted of Cu as the top and bottom layers, with a thickness of 10 μm, respectively. The middle layer was Invar with a 30% to 70% ratio of Ni and Fe and a total thickness of 30 μm. The chip pattern was successfully obtained by the wet etching process. Concerning the device performance after etching, high-performance LED/CIC chips were obtained. They had a low leakage current, high output power and a low red shift phenomenon as operated at a high injected current. After the development and fabrication of the copper-based composite substrate for N-side up thin-film AlGaInP LED/CIC chips could be diced by wet etching. The superiority of wet etching process for the AlGaInP LED/CIC chips is over that of chips obtained by mechanical or laser dicing.Ray-Hua HorngShreekant SinhaFu-Gow TarntairHsiang-An FengChia-Wei TuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Ray-Hua Horng Shreekant Sinha Fu-Gow Tarntair Hsiang-An Feng Chia-Wei Tu Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
description	Abstract In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper; CIC) were obtained by the wet etching process. The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. There was no delamination or cracking phenomenon of the LED epilayer which often occurs by laser or mechanical dicing. The chip area was 1140 μm × 1140 μm and the channel length was 360 μm. The structure of the CIC substrate was a sandwich structure and consisted of Cu as the top and bottom layers, with a thickness of 10 μm, respectively. The middle layer was Invar with a 30% to 70% ratio of Ni and Fe and a total thickness of 30 μm. The chip pattern was successfully obtained by the wet etching process. Concerning the device performance after etching, high-performance LED/CIC chips were obtained. They had a low leakage current, high output power and a low red shift phenomenon as operated at a high injected current. After the development and fabrication of the copper-based composite substrate for N-side up thin-film AlGaInP LED/CIC chips could be diced by wet etching. The superiority of wet etching process for the AlGaInP LED/CIC chips is over that of chips obtained by mechanical or laser dicing.
format	article
author	Ray-Hua Horng Shreekant Sinha Fu-Gow Tarntair Hsiang-An Feng Chia-Wei Tu
author_facet	Ray-Hua Horng Shreekant Sinha Fu-Gow Tarntair Hsiang-An Feng Chia-Wei Tu
author_sort	Ray-Hua Horng
title	Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
title_short	Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
title_full	Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
title_fullStr	Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
title_full_unstemmed	Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
title_sort	dicing of composite substrate for thin film algainp power leds by wet etching
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/deff4a8eb7c44ac892736feab6798042
work_keys_str_mv	AT rayhuahorng dicingofcompositesubstrateforthinfilmalgainppowerledsbywetetching AT shreekantsinha dicingofcompositesubstrateforthinfilmalgainppowerledsbywetetching AT fugowtarntair dicingofcompositesubstrateforthinfilmalgainppowerledsbywetetching AT hsianganfeng dicingofcompositesubstrateforthinfilmalgainppowerledsbywetetching AT chiaweitu dicingofcompositesubstrateforthinfilmalgainppowerledsbywetetching
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Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching

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