Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface

Cu(In,Ga)Se2 (CIGSe) is a promising absorber material for thin‐film photovoltaic devices. A key procedure to achieve high efficiencies is the application of alkali fluoride postdeposition treatments (PDT) of the CIGSe surface. While the effects of the PDT on the directly impacted CIGSe front surface...

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Autores principales:	Jakob Bombsch, Enrico Avancini, Romain Carron, Evelyn Handick, Raul Garcia-Diez, Claudia Hartmann, Roberto Félix, Daniel Abou-Ras, Shigenori Ueda, Regan G. Wilks, Marcus Bär
Formato:	article
Lenguaje:	EN
Publicado:	Wiley-VCH 2021
Materias:	back interfaces chalcopyrite thin-film solar cells Cu(In Ga)Se2 hard X-ray photoelectron spectroscopy postdeposition treatment Environmental technology. Sanitary engineering TD1-1066 Renewable energy sources TJ807-830
Acceso en línea:	https://doaj.org/article/df08cea5475144f5a928b248133194ed
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spelling	oai:doaj.org-article:df08cea5475144f5a928b248133194ed2021-11-04T09:03:08ZUnraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface2699-941210.1002/aesr.202100101https://doaj.org/article/df08cea5475144f5a928b248133194ed2021-11-01T00:00:00Zhttps://doi.org/10.1002/aesr.202100101https://doaj.org/toc/2699-9412Cu(In,Ga)Se2 (CIGSe) is a promising absorber material for thin‐film photovoltaic devices. A key procedure to achieve high efficiencies is the application of alkali fluoride postdeposition treatments (PDT) of the CIGSe surface. While the effects of the PDT on the directly impacted CIGSe front surface have been subject to extensive studies, less is known about the impact on the deeply buried CIGSe/Mo interface. Exposing the CIGSe absorber backside by stripping it off the Mo back contact allows to use surface‐sensitive photoelectron spectroscopy to study the chemical and electronic structure of this interface in unprecedented detail. CIGSe /Mo stacks prepared using NaF only and combined NaF/RbF (with optimal and excess amount of RbF) PDT are studied. Rb is detected accumulating at the backside of the RbF‐treated CIGSe absorbers in conjunction with a depletion of Na. The exposed CIGSe backsides display a Cu‐deficient surface region, with increased presence of Rb correlating with a decreased Cu content. Rb appears to be incorporated into the Cu‐deficient absorber region as previously detected on the front surface. However, in contrast to the front surface, no distinct, secondary RbInSe‐type phase is found at the back surface.Jakob BombschEnrico AvanciniRomain CarronEvelyn HandickRaul Garcia-DiezClaudia HartmannRoberto FélixDaniel Abou-RasShigenori UedaRegan G. WilksMarcus BärWiley-VCHarticleback interfaceschalcopyrite thin-film solar cellsCu(InGa)Se2hard X-ray photoelectron spectroscopypostdeposition treatmentEnvironmental technology. Sanitary engineeringTD1-1066Renewable energy sourcesTJ807-830ENAdvanced Energy & Sustainability Research, Vol 2, Iss 11, Pp n/a-n/a (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	back interfaces chalcopyrite thin-film solar cells Cu(In Ga)Se2 hard X-ray photoelectron spectroscopy postdeposition treatment Environmental technology. Sanitary engineering TD1-1066 Renewable energy sources TJ807-830
spellingShingle	back interfaces chalcopyrite thin-film solar cells Cu(In Ga)Se2 hard X-ray photoelectron spectroscopy postdeposition treatment Environmental technology. Sanitary engineering TD1-1066 Renewable energy sources TJ807-830 Jakob Bombsch Enrico Avancini Romain Carron Evelyn Handick Raul Garcia-Diez Claudia Hartmann Roberto Félix Daniel Abou-Ras Shigenori Ueda Regan G. Wilks Marcus Bär Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface
description	Cu(In,Ga)Se2 (CIGSe) is a promising absorber material for thin‐film photovoltaic devices. A key procedure to achieve high efficiencies is the application of alkali fluoride postdeposition treatments (PDT) of the CIGSe surface. While the effects of the PDT on the directly impacted CIGSe front surface have been subject to extensive studies, less is known about the impact on the deeply buried CIGSe/Mo interface. Exposing the CIGSe absorber backside by stripping it off the Mo back contact allows to use surface‐sensitive photoelectron spectroscopy to study the chemical and electronic structure of this interface in unprecedented detail. CIGSe /Mo stacks prepared using NaF only and combined NaF/RbF (with optimal and excess amount of RbF) PDT are studied. Rb is detected accumulating at the backside of the RbF‐treated CIGSe absorbers in conjunction with a depletion of Na. The exposed CIGSe backsides display a Cu‐deficient surface region, with increased presence of Rb correlating with a decreased Cu content. Rb appears to be incorporated into the Cu‐deficient absorber region as previously detected on the front surface. However, in contrast to the front surface, no distinct, secondary RbInSe‐type phase is found at the back surface.
format	article
author	Jakob Bombsch Enrico Avancini Romain Carron Evelyn Handick Raul Garcia-Diez Claudia Hartmann Roberto Félix Daniel Abou-Ras Shigenori Ueda Regan G. Wilks Marcus Bär
author_facet	Jakob Bombsch Enrico Avancini Romain Carron Evelyn Handick Raul Garcia-Diez Claudia Hartmann Roberto Félix Daniel Abou-Ras Shigenori Ueda Regan G. Wilks Marcus Bär
author_sort	Jakob Bombsch
title	Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface
title_short	Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface
title_full	Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface
title_fullStr	Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface
title_full_unstemmed	Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface
title_sort	unraveling the impact of combined naf/rbf postdeposition treatments on the deeply buried cu(in,ga)se2/mo thin‐film solar cell interface
publisher	Wiley-VCH
publishDate	2021
url	https://doaj.org/article/df08cea5475144f5a928b248133194ed
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Unraveling the Impact of Combined NaF/RbF Postdeposition Treatments on the Deeply Buried Cu(In,Ga)Se2/Mo Thin‐Film Solar Cell Interface

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