Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films

Abstract We report a systematic investigation of the differences in charge transport mechanism in ultra-thin nano-island like films of palladium with thickness varying between 5 nm and 3 nm. The thicker films were found to be metallic in a large temperature range with a dominant Bloch–Grüneisen mech...

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Autores principales:	Adithya Jayakumar, Viney Dixit, Sarath Jose, Vinayak B. Kamble, D. Jaiswal-Nagar
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/df340c10a39b4a2c9447a6e149964f99
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spelling	oai:doaj.org-article:df340c10a39b4a2c9447a6e149964f992021-11-21T12:22:49ZCharge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films10.1038/s41598-021-01787-12045-2322https://doaj.org/article/df340c10a39b4a2c9447a6e149964f992021-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-01787-1https://doaj.org/toc/2045-2322Abstract We report a systematic investigation of the differences in charge transport mechanism in ultra-thin nano-island like films of palladium with thickness varying between 5 nm and 3 nm. The thicker films were found to be metallic in a large temperature range with a dominant Bloch–Grüneisen mechanism of charge transport arising due to electron-acoustic phonon scattering. These films were also found to exhibit an additional electron–magnon scattering. At temperatures below 20 K, the two films displayed a metal-insulator transition which was explained using Al’tshuler’s model of increased scattering in disordered conductors. The thinner films were insulating and were found to exhibit Mott’s variable range hopping mechanism of charge transport. The thinnest film showed a linear decrease of resistance with an increase in temperature in the entire temperature range. The island-like thin films were found to display very different response to hydrogenation at room temperature where the metallic films were found to display a decrease of resistance while the insulating films were found to have an increase of resistance. The decrease of resistance was ascribed to a hydrogen induced lattice expansion in the thin films that were at the percolation threshold while the resistance increase to an increase in work function of the films due to an increased adsorption of the hydrogen atoms at the surface sites of palladium.Adithya JayakumarViney DixitSarath JoseVinayak B. KambleD. Jaiswal-NagarNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-18 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Adithya Jayakumar Viney Dixit Sarath Jose Vinayak B. Kamble D. Jaiswal-Nagar Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films
description	Abstract We report a systematic investigation of the differences in charge transport mechanism in ultra-thin nano-island like films of palladium with thickness varying between 5 nm and 3 nm. The thicker films were found to be metallic in a large temperature range with a dominant Bloch–Grüneisen mechanism of charge transport arising due to electron-acoustic phonon scattering. These films were also found to exhibit an additional electron–magnon scattering. At temperatures below 20 K, the two films displayed a metal-insulator transition which was explained using Al’tshuler’s model of increased scattering in disordered conductors. The thinner films were insulating and were found to exhibit Mott’s variable range hopping mechanism of charge transport. The thinnest film showed a linear decrease of resistance with an increase in temperature in the entire temperature range. The island-like thin films were found to display very different response to hydrogenation at room temperature where the metallic films were found to display a decrease of resistance while the insulating films were found to have an increase of resistance. The decrease of resistance was ascribed to a hydrogen induced lattice expansion in the thin films that were at the percolation threshold while the resistance increase to an increase in work function of the films due to an increased adsorption of the hydrogen atoms at the surface sites of palladium.
format	article
author	Adithya Jayakumar Viney Dixit Sarath Jose Vinayak B. Kamble D. Jaiswal-Nagar
author_facet	Adithya Jayakumar Viney Dixit Sarath Jose Vinayak B. Kamble D. Jaiswal-Nagar
author_sort	Adithya Jayakumar
title	Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films
title_short	Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films
title_full	Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films
title_fullStr	Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films
title_full_unstemmed	Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films
title_sort	charge transport variation from bloch–grüneisen to mott variable range hopping and transport change due to hydrogenation in palladium thin films
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/df340c10a39b4a2c9447a6e149964f99
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Charge transport variation from Bloch–Grüneisen to Mott variable range hopping and transport change due to hydrogenation in Palladium thin films

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